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AUIRFN8458 Dual N-Channel MOSFET

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Description

  AUTOMOTIVE GRADE AUIRFN8458 VDSS RDS(on) typ.max ID (@TC (Bottom) = 25°C     .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-res.

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Features

* Advanced Process Technology
* Dual N-Channel MOSFET
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualified

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