Datasheet4U Logo Datasheet4U.com

AUIRF7303Q - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified.
  • D1 D1 D2 D2 V(BR)DSS RDS(on) max. ID 30V 0.05Ω 5.3A 3 4 6 5 Top View.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7303Q Dual N-Channel MOSFET Infineon
AUIRF7304Q Dual P-Channel MOSFET Infineon
AUIRF7309Q Dual N/P-Channel MOSFET Infineon
AUIRF7313Q Dual N-Channel MOSFET Infineon
AUIRF7316Q Dual P-Channel MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF7304Q Power MOSFET
AUIRF7309Q Power MOSFET
AUIRF7313Q Power MOSFET
AUIRF7316Q Power MOSFET
AUIRF7319Q Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 97654C AUIRF7303Q Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* D1 D1 D2 D2 V(BR)DSS RDS(on) max. ID 30V 0.05Ω 5.3A 3 4 6 5 Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.