Description
AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.
Features
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AUIRF6218S AUIRF6218L
HEXFET® Power MOSFET
Advanced Planar Technology Low On-Resistance P-Channel
Dynamic dV/dT Rating
D
V(BR)DSS RDS(on) max ID
-150V 150m -27A
175°C Operating Temperature Fast Switching
Fully Avalanche Rated
G S
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Repetitive Avalanche Allowed up to Tjmax
Applications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme