Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- ters (inches)
10.54 (.415) 10.29 (.405) 1.40 (.055) MAX. -A2
4.69 (.185) 4.20 (.165)
-B1.32 (.052) 1.22 (.048)
10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 3X 5.08 (.200)
0.93 (.037) 0.69 (.027) 0.25 (.010) M B A M
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045).
3710S_InternationalRectifier.pdf
