PAD5 - PicoAmp Diode

This page provides the datasheet information for the PAD5, a member of the PAD1 PicoAmp Diode family.

Description

The -45V InterFET PAD1 and PAD2 are targeted for low power and high impedance applications.

Leakages are typically 0.5pA at room temperatures.

The TO-18 package is hermetically sealed and suitable for military applications.

Features

InterFET N0001H Geometry.
Low Leakage: 0.5pA Typical.
Low Capacitance: 0.8pF Typical.
RoHS Compliant.
SMT, TH, and Bare Die Package options.

InterFET

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Datasheet Details

Part number	PAD5
Manufacturer	InterFET
File Size	348.82 KB
Description	PicoAmp Diode
Datasheet	PAD5 Datasheet
Additional preview pages of the PAD5 datasheet.

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Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now PAD1-2-5 PAD1, PAD2, PAD5 PicoAmp Diode Features • InterFET N0001H Geometry • Low Leakage: 0.5pA Typical • Low Capacitance: 0.8pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • High Impedance Protection Circuits • Low Power Battery Circuitry • High Impedance Diode Switching Description The -45V InterFET PAD1 and PAD2 are targeted for low power and high impedance applications. Leakages are typically 0.5pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. For SOT23 functionality pins 1 and 2 must be externally shorted.

Published: Jul 29, 2024 |