NJ36D Datasheet - InterFET

NJ36D Silicon Junction Field-Effect Transistor

F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor Monolithic Dual Construction High Frequency Amplifier Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C S D G Die Size = 0.026" X 0.026" All Bond Pads = 0.004" Sq. Substrate is also Gate. G D S Devices in this Databook based on the NJ36D Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912.

NJ36D_InterFET.pdf

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Datasheet Details

Part number:

NJ36D

Manufacturer:

InterFET

File Size:

150.29 KB

Description:

Silicon junction field-effect transistor.

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NJ36D NJ36D Silicon Junction Field-Effect Transistor InterFET

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