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N3600L Process Geometry

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Description

InterFET Product Folder Technical Support Order Now N3600L N3600L Process Geometry .
The InterFET N3600L Geometry is ideal for low noise high gain applications.

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Datasheet Specifications

Part number
N3600L
Manufacturer
InterFET
File Size
854.11 KB
Datasheet
N3600L-InterFET.pdf
Description
Process Geometry

Features

* Low Noise: 0.5 nV/√Hz Typical
* Typical Breakdown Voltage: -22V
* Low On Resistance: 2.0Ω Typical
* Die Size: 1838um X 1838um X 203um
* Oversized Bond Pads
* Substrate Connected to Gate

Applications

* Large Capacitance Detector Pre-Amplifier
* Matched Pair Applications

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