N0014EU Process Geometry

InterFET

Description

InterFET Product Folder Technical Support Order Now N0014EU N0014EU Process Geometry .
The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications.

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Datasheet Specifications

Part number: N0014EU
Manufacturer: InterFET
File Size: 399.36 KB
Datasheet: N0014EU-InterFET.pdf
Description: Process Geometry

Features

* Low Input Capacitance: 2.3pF Typical
* Low Gate Leakage: 1.5pA Typical
* High Breakdown Voltage: -30V Typical
* High Input Impedance
* Die Size: 482um X 482um X 203um
* Bond Pads: 90um Diameter
* Substrate Connected to Gate
* Au Back

Applications

* Small Signal Amplifiers
* Audio Amplifiers
* Low Noise High Gain Amplifier
* RF Amplifiers

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N0014EU Process Geometry InterFET

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