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N0014EU Process Geometry

N0014EU Description

InterFET Product Folder Technical Support Order Now N0014EU N0014EU Process Geometry .
The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications.

N0014EU Features

* Low Input Capacitance: 2.3pF Typical
* Low Gate Leakage: 1.5pA Typical
* High Breakdown Voltage: -30V Typical
* High Input Impedance
* Die Size: 482um X 482um X 203um
* Bond Pads: 90um Diameter
* Substrate Connected to Gate
* Au Back

N0014EU Applications

* Small Signal Amplifiers
* Audio Amplifiers
* Low Noise High Gain Amplifier
* RF Amplifiers

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Datasheet Details

Part number
N0014EU
Manufacturer
InterFET
File Size
399.36 KB
Datasheet
N0014EU-InterFET.pdf
Description
Process Geometry

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