28F016XD Datasheet (Intel) - 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

28F016XD, 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

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E n n n n n n 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY n n n n n n n 56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set 2 µA Typical Deep Power-Down Current 1 mA Typical I CC Active Current in Static Mode 32 Separately-Erasable/Lockable 64-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.6 µm ETOX™ IV Flash Technology 85 ns Access Time (t RAC)  Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus  RAS# and CAS# Co

28F016XD Features

* extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows