IS62WV102416ALL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

Integrated Silicon Solution

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Datasheet Details

Part number	IS62WV102416ALL
Manufacturer	Integrated Silicon Solution
File Size	375.47 KB
Description	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS62WV102416ALL-IntegratedSiliconSolution.pdf

IS62WV102416ALL Product details

Description

The ISSI IS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power

Features

High-speed access times: 25, 35 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CS1 and OE options.
CS1 power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) sp.

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Published: Mar 8, 2014 |