MR2002C Datasheet (Innogration) - High Power RF LDMOS FET

MR2002C, High Power RF LDMOS FET

The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.

It can be used MR2002C in Class AB/B and Class C for all typical modulation formats.

It can also operate at lower voltage down to 12V with decreased power capabili

MR2002C Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Suitable Application