MR2002C - High Power RF LDMOS FET

Innogration

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Datasheet Details

Part number	MR2002C
Manufacturer	Innogration
File Size	280.57 KB
Description	High Power RF LDMOS FET
Datasheet	MR2002C-Innogration.pdf

MR2002C Product details

Description

The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW.Frequency Gp (dB) P-1dB (W) 1000 MHz 22 20 D@P-1 (%) 65 Notice: It is recomm

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Suitable.

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Published: Aug 5, 2018 |