MQ081K0VP - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	MQ081K0VP
Manufacturer	Innogration
File Size	659.17 KB
Description	High Power RF LDMOS FET
Datasheet	MQ081K0VP Datasheet
Additional preview pages of the MQ081K0VP datasheet.

Product details

Description

The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz. Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us duty cycle 10% 19.3 1060 68.5 Document Number: MQ081K0VP Preliminary Datasheet V1.0 MQ081K0VP

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature R.

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Published: Aug 5, 2018 |