MQ081K0VP Datasheet (Innogration) - High Power RF LDMOS FET

MQ081K0VP, High Power RF LDMOS FET

The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz.

* Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C P

MQ081K0VP Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Excellent thermal stability, low HCI drift

* Compliant to Restriction of Haza