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MM10R5 LDMOS TRANSISTOR
5W, 28V High Power RF LDMOS FETs
Description
The MM10R5 is a 5-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 2.7 GHz. It can be used in Class AB/B and Class C for all typical modulation formats.
Document Number: MM10R5 Product Datasheet V3.0
MM10R5
Typical Performance (On Innogration fixture with device soldered):
P-1dB= 5 Watts @ 1000 MHz, VDD = 28 Volts, IDQ = 40 mA, CW.
Frequency Gp (dB)
P-1dB (W)
D@P-1 (%)
1000 MHz
22
5
60
Typical Performance (On Innogration fixture with device soldered):
Freq=1.3GHz，VDD = 24 Volts, IDQ = 10 mA, CW.
Gp (dB)
POUT (dBm)
D (%)
17.1
30.6
30.4%
17.2
31.7
34.1%
17.2
32.6
37.7%
17.0
33.4
40.6%
16.5
34.0
42.
MM10R5 Datasheet
