ITSN20015P2 - RF Power LDMOS FET

Innogration

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Datasheet Details

Part number	ITSN20015P2
Manufacturer	Innogration
File Size	781.93 KB
Description	RF Power LDMOS FET
Datasheet	ITSN20015P2-Innogration.pdf

ITSN20015P2 Product details

Description

The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW.Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (W) (%) (W) (%) 870 16.4 18 56 22 60 Typical Performance (O

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Designed for broadband operation.
Excellent ruggedness.
Large Positive and Negative Gate/Source Voltage Range for Improved C.

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Published: Aug 5, 2018 |