SIGC12T120LE Datasheet (Infineon)

SIGC12T120LE, IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.

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SIGC12T120LE Features

* 1200V Trench + Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power module Applications:

* drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm