PXFC211507SC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

The PXFC211507SC by Infineon is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

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PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET by Infineon - Datasheet Preview — Official preview page of the **PXFC211507SC** Thermally-Enhanced High Power RF LDMOS FET datasheet (Infineon).

Datasheet Details

Part number	PXFC211507SC
Manufacturer	Infineon
File Size	193.28 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXFC211507SC-Infineon.pdf
Additional preview pages of the PXFC211507SC datasheet.

PXFC211507SC Product details

Description

The PXFC211507SC is a 150-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2110 to 2170 MHz frequency band.

Features

include input and output matching, high gain and a thermally-enhanced package with earless ﬂanges. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC211507SC Package H-37248G-4/2 (formed leads) Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, VGS = 2.6 V, IDQ = 960 mA, ƒ = 2115 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 21 56 20 Gain 19 48 40 18 32 17 24 16 1.

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Published: Nov 27, 2016 |