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ISZ810P06LM MOSFET

ISZ810P06LM Description

ISZ810P06LM MOSFET OptiMOSTM Power Transistor, -60 V .

ISZ810P06LM Features

* P-Channel
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* Logic Level
* Enhancement mode
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to J

ISZ810P06LM Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS -60 V RDS(on),max 81 mΩ ID -19.5 A PG-TSDSON-8 FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type / Ordering Code ISZ810P06LM Package PG-TSDSON-8 FL Mar

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