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ISC055N15NM6 150V MOSFET

ISC055N15NM6 Description

Public ISC055N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V .
1 Maxi.

ISC055N15NM6 Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21
* MSL 1 classified according to J‑STD‑020 Product

ISC055N15NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 150 V RDS(on),max 5.5 mΩ ID 130 A Qoss 130 nC QG 43 nC Qrr (500 A/μs) 105 nC Type/Ordering Code ISC055N15NM6 Package PG‑TDSON‑8 PG‑TDSON‑8 FL 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate
* 1 Pin

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