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ISC022N10NM6 100V MOSFET

ISC022N10NM6 Description

ISC022N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V .

ISC022N10NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

ISC022N10NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 2.24 mΩ ID 230 A Qoss 135 nC QG(0V10V) 73 nC Qrr (100A/µs) 70 nC PG-TSON-8-3 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin

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