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IRFU3710Z-701PbF, IRFR3710ZPbF Power MOSFET

IRFU3710Z-701PbF Description

  .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRFU3710Z-701PbF Features

* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Multiple Package Options
* Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(o

IRFU3710Z-701PbF Applications

* SS G GD D- Pak IRFR3710ZPbF I- Pak IRFU3710ZPbF I-Pak Lead form 701 IRFU3710Z-701PbF Refer to page 11 for package outline G Gate D Drain S Source Base part number IRFU3710ZPbF IRFR3710ZPbF Package Type I-Pak D-Pak Standard Pack Form Tube Tube Tape an

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRFU3710Z-701PbF, IRFR3710ZPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFU3710Z-701PbF, IRFR3710ZPbF
Manufacturer
Infineon ↗
File Size
665.64 KB
Datasheet
IRFR3710ZPbF-Infineon.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFU3710Z-701PbF, IRFR3710ZPbF.
Please refer to the document for exact specifications by model.

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Power MOSFET Infineon
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