Description
IRFR3710ZPbF .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
Applications
* S G
D- Pak IRFR3710ZPbF
Refer to page 9 for package outline
G Gate
D Drain
S Source
Base part number IRFR3710ZPbF
Package Type D-Pak
Standard Pack Form Tape and Reel Left Tape and Reel
Quantity 3000 2000
Orderable Part Number
IRFR3710ZTRLPbF IRFR3710ZTRPbF
Absolute Maximum Ratings
Symbol