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IPU80R1K4CE MOSFET

IPU80R1K4CE Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K4CE Data Sheet Rev.2.3 Final Power Man.
CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs.

IPU80R1K4CE Features

* High voltage technology
* Extreme dv/dt rated
* High peak current capability
* Low gate charge
* Low effective capacitances
* Qualified according to JEDEC Standard
* Pb-free lead plating; RoHS compliant; halogen free mold compound DPAK tab

IPU80R1K4CE Applications

* LED Lighting for retrofit applications in QR Flyback topology Table 1 Key Performance Parameters Parameter VDS @ Tj=25°C RDS(on),max Qg,typ ID,pulse VGS(th),typ CO(tr),typ Value 800 1.4 23 12 3 51 Unit V Ω nC A V pF Type / Ordering Code IPD80R1K4CE IPU80R1K4CE Package PG-TO 252 P

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