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IPTG029N13NM6 MOSFET

IPTG029N13NM6 Description

IPTG029N13NM6 MOSFET OptiMOSTM 6 Power-Transistor, 135 V .

IPTG029N13NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* 100% avalanche tested
* 175°C operating temperature
* Optimized for motor drives and battery p

IPTG029N13NM6 Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
* MSL 1 classified according to J-STD-020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS

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