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IPTC014N10NM5 - 100V MOSFET

Description

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Features

  • N-channel.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription

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IPTC014N10NM5 MOSFET OptiMOSTM5Power-Transistor,100V Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 1.4 mΩ ID 365 A Qoss 213 nC QG 168 nC PG-HDSOP-16 16 9 16 9 1 8 8 1 Drain Pin 9-16, Tab Gate Pin 8 Source Pin 1-7 Type/OrderingCode IPTC014N10NM5 Package PG-HDSOP-16 Marking 14N10NM5 RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-05-24 OptiMOSTM5Power-Transistor,100V IPTC014N10NM5 TableofContents Description . . . . . . . . . . . . . . .
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