Datasheet4U.com

IPS60R210PFD7S - 600V MOSFET

Infineon

📥 Download Datasheet

IPS60R210PFD7S Datasheet Preview — Preview of IPS60R210PFD7S PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IPS60R210PFD7S
Manufacturer	Infineon
File Size	625.42 KB
Description	600V MOSFET
Datasheet	IPS60R210PFD7S-Infineon.pdf

IPS60R210PFD7S Product details

Description

. . .

Features

Extremely low losses due to very low FOM RDS(on).
Qg and RDS(on).
Eoss.
Low switching losses Eoss, excellent thermal behavior.
Fast body diode.
Wide range portfolio of RDS(on) and package variations Benefits.
Enables high power density designs and small form factors.
Enables efficiency gains at higher switching frequencies.
Excellent commutation ruggedness.
Easy to select right parts and optimize the design Potential.

📁 IPS60R210PFD7S Similar Datasheet

IPS6011PBF - INTELLIGENT POWER HIGH SIDE SWITCH (International Rectifier)
IPS6011RPBF - INTELLIGENT POWER HIGH SIDE SWITCH (International Rectifier)
IPS6011SPBF - INTELLIGENT POWER HIGH SIDE SWITCH (International Rectifier)
IPS604-03D - High sensitive triggering levels (IP Semiconductor)
IPS604-03I - High sensitive triggering levels (IP Semiconductor)
IPS604-05D - High sensitive triggering levels (IP Semiconductor)
IPS604-05I - High sensitive triggering levels (IP Semiconductor)
IPS604-06D - High sensitive triggering levels (IP Semiconductor)

Other Datasheets by Infineon

IPS60R2K1CE - MOSFET
IPS60R1K0CE - MOSFET
IPS60R1K5CE - MOSFET
IPS60R3K4CE - MOSFET
IPS60R400CE - MOSFET
IPS60R460CE - MOSFET

Published: May 20, 2025 |