IPP35CN10N Power-Transistor

Infineon

IPP35CN10N Description

IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor .

IPP35CN10N Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualifi

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Datasheet Details

Part number: IPP35CN10N
Manufacturer: Infineon ↗
File Size: 854.29 KB
Datasheet: IPP35CN10N-Infineon.pdf
Description: Power-Transistor

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Power-Transistor Infineon

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