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IPP029N15NM6 MOSFET

IPP029N15NM6 Description

Public IPP029N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V .
1 Maxi.

IPP029N15NM6 Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for

IPP029N15NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 150 V RDS(on),max 2.9 mΩ ID 197 A Qoss 310 nC QG 105 nC Qrr (500A/μs) 220 nC Type/Ordering Code IPP029N15NM6 Package PG‑TO220‑3 PG‑TO220‑3 tab 1 23 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 029N15N6 Rel

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