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IPI80N03S4L-03 Power-Transistor

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Description

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 30 2.4 80 PG-TO262-3-1.

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Features

* N-channel - Enhancement mode
* Automotive AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* Green product (RoHS compliant)
* Ultra low Rds(on)
* 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB80N03S

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