Datasheet4U Logo Datasheet4U.com

IPD50R650CE - MOSFET

Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • Pb-free plating, Halogen free mold compound.
  • Qualified for standard grade.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD50R650CE N-Channel MOSFET INCHANGE
IPD50R1K4CE N-Channel MOSFET INCHANGE
IPD50R280CE N-Channel MOSFET INCHANGE
IPD50R2K0CE N-Channel MOSFET INCHANGE
IPD50R380CE N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPD50R1K4CE MOSFET
IPD50R280CE MOSFET
IPD50R2K0CE MOSFET
IPD50R380CE Power Transistor
IPD50R399CP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPD50R650CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.
Published: |