Datasheet4U Logo Datasheet4U.com

IPD49CN10NG - Power Transistor

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Product Summary V DS R DS(on),max (TO252) ID 100 V 49 mΩ 20 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD4000 IP DSL Access Multiplexer Net to Net
IPD4000 4 Slot Ethernet Based IP DSL Access Multiplexer 12000 LTI
IPD400N06N N-Channel MOSFET INCHANGE
IPD400N06NG Power-Transistor Infineon Technologies
IPD025N06N N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPD400N06N Power-Transistor
IPD40N03S4L-08 Power-Transistor
IPD42DP15LM MOSFET
IPD48CN10NG Power Transistor
IPD023N04NF2S 40V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Product Summary V DS R DS(on),max (TO252) ID 100 V 49 mΩ 20 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Package Marking PG-TO263-3 50CN10N PG-TO252-3 49CN10N PG-TO262-3 50CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energ
Published: |