Datasheet Details
| Part number | IPC26N12N |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 1.87 MB |
| Description | MOSFET |
| Datasheet |
 IPC26N12N-Infineon.pdf
|
| Part number | IPC26N12N |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 1.87 MB |
| Description | MOSFET |
| Datasheet |
IPC26N12N-Infineon.pdf
|
N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP048N12N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlSi system Passivation: nitride (only on edge structure) Power MOS Transistor Chip Table 1 Key Perfo
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