Datasheet Details
| Part number | IPC171N04N |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 1.47 MB |
| Description | MOSFET |
| Datasheet |
 IPC171N04N-Infineon.pdf
|
| Part number | IPC171N04N |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 1.47 MB |
| Description | MOSFET |
| Datasheet |
IPC171N04N-Infineon.pdf
|
N-channel enhancement mode For dynamic characterization refer to the datasheet of IPB021N04N G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlSi system Passivation: nitride (only on edge structure) Power MOS Transistor Chip Table 1 Key Perfor
📁 IPC171N04N Similar Datasheet