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IPB60R060C7 MOSFET

IPB60R060C7 Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPB60R060C7 Data Sheet Rev.2.0 Final Power Man.
CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infi.

IPB60R060C7 Features

* Suitable for hard and soft switching (PFC and high performance LLC)
* Increased MOSFET dv/dt ruggedness to 120V/ns
* Increased efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Qualified for industrial

IPB60R060C7 Applications

* according to JEDEC (J-STD20 and JESD22) Benefits
* Increased economies of scale by use in PFC and PWM topologies in the application
* Higher dv/dt limit enables faster switching leading to higher efficiency
* Enabling higher system efficiency by lower switching losses

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