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IPB407N30N MOSFET

IPB407N30N Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPB407N30N Data Sheet Rev.2.0 Final Power Manage.
Features. N-channel, normal level. Fast Diode with reduced Qrr. Optimized for hard commutation ruggedness. Very lo.

IPB407N30N Features

* N-channel, normal level
* Fast Diode with reduced Qrr
* Optimized for hard commutation ruggedness
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for tar

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