IPB26CN10N Power-Transistor

Infineon

IPB26CN10N Description

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor .

IPB26CN10N Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualifi

📥 Download Datasheet

IPB26CN10N Datasheet Preview — Preview of IPB26CN10N PDF

Datasheet Details

Part number: IPB26CN10N
Manufacturer: Infineon ↗
File Size: 1.01 MB
Datasheet: IPB26CN10N-Infineon.pdf
Description: Power-Transistor

📁 Related Datasheet

IPB26CNE8NG - Power-Transistor (Infineon Technologies)
IPB200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N25N3G - Power-Transistor (Infineon Technologies)
IPB22N03S4L-15 - Power-Transistor (Infineon Technologies)
IPB230N06L3G - Power-Transistor (Infineon Technologies)
IPB25N06S3-25 - Power-Transistor (Infineon Technologies)
IPB25N06S3L-22 - Power-Transistor (Infineon Technologies)
IPB009N03LG - MOSFET (Infineon Technologies)

📌 All Tags

Power-Transistor Infineon

Infineon IPB26CN10N-like datasheet

IPB26CN10NG - Power-Transistor
IPB200N15N3 - Power-Transistor
IPB200N25N3 - Power-Transistor
IPB240N03S4L-R8 - Power-Transistor
IPB240N03S4L-R9 - Power-Transistor
IPB240N04S4-1R0 - Power-Transistor