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IPB180N10S4-02 - Power-Transistor

Infineon

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Datasheet Details

Part number	IPB180N10S4-02
Manufacturer	Infineon ↗
File Size	743.83 KB
Description	Power-Transistor
Datasheet	IPB180N10S4-02-Infineon.pdf

IPB180N10S4-02 Product details

Features

N-channel - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mW 180 A PG-TO263-7-3 Type IPB180N10S4-02 Package Marking PG-TO263-7-3 4N1002 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V1) T C=100°C, V.

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Published: May 29, 2015 |