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IPB095N20NM6 200V MOSFET

IPB095N20NM6 Description

Public IPB095N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200 V .
1 Maxi.

IPB095N20NM6 Features

* N‑channel, normal level
* Low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* 175°C operating temperature
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC6

IPB095N20NM6 Applications

* Table 1 Key performance parameters Parameter Value Unit VDS 200 V RDS(on),max 9.5 mΩ ID 116 A Qoss 168 nC QG 53 nC Qrr (1000A/μs) 307 nC Part number IPB095N20NM6 Package PG‑TO263‑3 D²PAK tab 2 1 3 32 1 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 095N20N6 Related

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200V MOSFET Infineon
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