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IPB065N10N3, IPB065N10N3G MOSFET

IPB065N10N3 Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev.2.0 Final Power Man.
Features. N-channel, normal level. Excellent gate charge x RDS(on) product (FOM). Very low on-resistance RDS(on).

IPB065N10N3 Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IPB065N10N3, IPB065N10N3G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IPB065N10N3, IPB065N10N3G
Manufacturer
Infineon ↗
File Size
1.12 MB
Datasheet
IPB065N10N3G-Infineon.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: IPB065N10N3, IPB065N10N3G.
Please refer to the document for exact specifications by model.

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MOSFET Infineon
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