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IPB031NE7N3, IPB031NE7N3G Power Transistor

IPB031NE7N3 Description

OptiMOSTM3 Power-Transistor .

IPB031NE7N3 Features

* Optimized technology for synchronous rectification
* Ideal for high frequency switching and DC/DC converters
* Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID
* Very low on-resistance RDS(on)
* N-channel, normal level

IPB031NE7N3 Applications

* Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G IPB031NE7N3 G 75 V 3.1 mΩ 100 A Package Marking PG-TO263-3 031NE7N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IPB031NE7N3, IPB031NE7N3G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IPB031NE7N3, IPB031NE7N3G
Manufacturer
Infineon ↗
File Size
245.16 KB
Datasheet
IPB031NE7N3G_InfineonTechnologiesAG.pdf
Description
Power Transistor
Note
This datasheet PDF includes multiple part numbers: IPB031NE7N3, IPB031NE7N3G.
Please refer to the document for exact specifications by model.

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