IMSQ120R012M2HH - 1200V SiC MOSFET

Infineon

📥 Download Datasheet

IMSQ120R012M2HH Datasheet Preview — Preview of IMSQ120R012M2HH PDF

Datasheet Details

Part number	IMSQ120R012M2HH
Manufacturer	Infineon
File Size	1.31 MB
Description	1200V SiC MOSFET
Datasheet	IMSQ120R012M2HH-Infineon.pdf

IMSQ120R012M2HH Product details

Description

13-16 (5-8) case 1(2) and drain D1(D2) 3,4 (11,12) source S1(S2) 2(10) kelvin sense K1(K2) 1(9) gate G1(G2) Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.(9) G2 (10) K2 (1) G1 (2) K1 D2 (5,6,7,8) S2 (11,12) D1 (13,14,15,16) S1 (3,4) Type IMSQ120R012M2HH Package PG-HDSOP-16-U03

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 89 A at TC = 100°C.
RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C.
Internal layout optimized for fast switching.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutatio.

📁 IMSQ120R012M2HH Similar Datasheet

IMS-2 - Inductors Commercial (Vishay Siliconix)
IMS-2SWWD-3 - Inductors (Vishay Siliconix)
IMS-2SWWD-30 - Inductors (Vishay Siliconix)
IMS-2WWD-40 - Inductors (Vishay Siliconix)
IMS-5 - Inductors (Vishay)
IMS1400 - High Performance 16K x 1 Static RAM (Inmos)
IMS1400M - High Performance 16K Static RAM (Inmos)
IMS1403 - High Performance 16K x 1 Static RAM (Inmos)

Other Datasheets by Infineon

Published: May 20, 2025 |