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IKQ50N120CH3 IGBT

IKQ50N120CH3 Description

IKQ50N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery .

IKQ50N120CH3 Features

* C High speed H3 technology offers:
* High efficiency in hard switching and resonant topologies
* 10µsec short circuit withstand time at Tvj=175°C
* Easy paralleling capability due to positive temperature coefficient in VCEsat
* Low EMI
* Low Gate Charge QG

IKQ50N120CH3 Applications

* Industrial UPS
* Charger
* Energy Storage
* Three-level Solar String Inverter
* Welding Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Key Performance and Package Parameters Type VCE IC VCEsat,

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