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IKA10N65ET6 IGBT

IKA10N65ET6 Description

IKA10N65ET6 TRENCHSTOP™ IGBT6 IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode .

IKA10N65ET6 Features

* C
* Very low VCE(sat) 1.5V (typ. )
* Maximum junction temperature 175°C

IKA10N65ET6 Applications

* offers :
* very tight parameter distribution
* high ruggedness, temperature stable behavior
* low VCEsat and positive temperature coefficient
* Low gate charge QG
* Pb-free lead plating; RoHS compliant
* Very soft, fast recovery anti-parallel

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