IJW120R100T1 Silicon Carbide-Junction Field Effect Transistor

Infineon

Description

SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Datasheet Rev.2.0, <2013-09-.
CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide.

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Datasheet Specifications

Part number: IJW120R100T1
Manufacturer: Infineon ↗
File Size: 1.14 MB
Datasheet: IJW120R100T1-Infineon.pdf
Description: Silicon Carbide-Junction Field Effect Transistor

Features

* Ultra fast switching
* Internal fast body diode
* Low intrinsic capacitance
* Low gate charge
* 175 °C maximum operating temperature Gate Drain Source Drain Pin 2 Gate Pin 1 Benefits
* Enabling higher system efficiency and/ or higher output power in same housing

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IJW120R100T1 Silicon Carbide-Junction Field Effect Transistor Infineon

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