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IHW30N110R3 - IGBT

Description

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Features

  • Powerful monolithic body diode with low forward voltage designed for soft commutation only.
  • Very tight parameter distribution.
  • High ruggedness, temperature stable behavior.
  • Low VCEsat.
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat.
  • Low EMI.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription

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ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N110R3 Datasheet IndustrialPowerControl ResonantSwitchingSeries IHW30N110R3 ReverseconductingIGBTwithmonolithicbodydiode  Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •LowVCEsat •Easyparallelswitchingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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