IGOT65R055D2 Power Transistor

Infineon

IGOT65R055D2 Description

Public IGOT65R055D2 Target datasheet CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Infineon’s CoolGaN™ is a highly efficient GaN (ga.
1 Maxi.

IGOT65R055D2 Features

* Enhancement mode transistor ‑ Normally OFF switch
* Ultra fast switching
* No reverse‑recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness
* ESD (HBM/CDM) JEDEC standards Benef

IGOT65R055D2 Applications

* Industrial, telecom, datacenter SMPS, charger and adapter based on half‑bridge topologies (half‑bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). Product validation Fully qualified according to JEDEC for Industrial Applications Please note: Target Datasheet

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Datasheet Details

Part number: IGOT65R055D2
Manufacturer: Infineon ↗
File Size: 1.08 MB
Datasheet: IGOT65R055D2-Infineon.pdf
Description: Power Transistor

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