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IGLD60R190D1S Power Transistor

IGLD60R190D1S Description

IGLD60R190D1S IGLD60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor .

IGLD60R190D1S Features

* Enhancement mode transistor
* Normally OFF switch
* Ultra fast switching
* No reverse-recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness

IGLD60R190D1S Applications

* according to JEDEC Standards Benefits
* Improves system efficiency
* Improves power density
* Enables higher operating frequency
* System cost reduction savings
* Reduces EMI D D D D 1 G SK S S S S SK G 8 Gate Drain Kelvin Source Source 8 1,2,3,4 7 5,6 Applications Consumer

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