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IGI65D1414A3MS - Dual 650V Transistor

Infineon

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Datasheet Details

Part number	IGI65D1414A3MS
Manufacturer	Infineon
File Size	1.92 MB
Description	Dual 650V Transistor
Datasheet	IGI65D1414A3MS-Infineon.pdf

IGI65D1414A3MS Product details

Description

IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 m (typ.

Features

Two 140 m GaN switches in half-bridge configuration.
Ultra fast switching.
No reverse-recovery charge.
Capable of reverse conduction.
Low gate charge, low output charge.
Kelvin source connection.
Thermally enhanced 6 x 8 mm QFN-32 package.
Qualified according to JEDEC Standard.

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Published: May 24, 2025 |