IGC99T120T6RM IGBT

Infineon

Description

IGC99T120T6RM IGBT4 Medium Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pr.

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Datasheet Specifications

Part number: IGC99T120T6RM
Manufacturer: Infineon ↗
File Size: 70.57 KB
Datasheet: IGC99T120T6RM-Infineon.pdf
Description: IGBT

Features

* 1200V Trench + Field Stop technology
* low switching losses
* soft turn off
* positive temperature coefficient
* easy paralleling This chip is used for:

Applications

* medium power drives C G E Chip Type VCE ICn Die Size IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Pa

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