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IDM10G120C5 - 1200V SiC Schottky Diode

IDM10G120C5 Description

Diode Silicon Carbide Schottky Diode IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev.2.1 2021-06-09 Industrial Powe.

IDM10G120C5 Features

* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery current / No forward recovery
* Temperature independent switching behavior
* Low forward voltage even at high operating temperature
* Tight forward voltage distribution
* Excellent thermal perform

IDM10G120C5 Applications

* Pb-free lead plating; RoHS compliant Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher system reliability due to lower operating tempe

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1200V SiC Schottky Diode Infineon
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