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IDK10G65C5 - Silicon Carbide Diode

IDK10G65C5 Description

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK10G65C5 Final Data Sheet Rev.2.1, 2017-08-11 Power Management & Multimar.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

IDK10G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

IDK10G65C5 Applications

* Breakdown voltage tested at 22 mA2)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher

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